Memory device having bitline segmented into bitline segments and related method for operating memory device

ABSTRACT

A memory device includes a plurality of circuit layers, a plurality of first conductive through via structures and a plurality of bitlines. The circuit layers are disposed one above another, and each circuit layer includes one or more memory cell arrays. The first conductive through via structures penetrates though the circuit layers. Each of the bitlines includes a plurality of bitline segments disposed on the circuit layers respectively. The bitline segments are electrically connected through one of the first conductive through via structures. Each bitline segment is coupled to a plurality of memory cells of a memory cell array of a circuit layer where the bitline segment is disposed.

PRIORITY CLAIM AND CROSS-REFERENCE

The present application claims priority to U.S. Provisional PatentApplication No. 62/734,084, filed on Sep. 20, 2018, which isincorporated by reference herein in its entirety.

BACKGROUND

The present disclosure relates to memory devices, and more particularly,to a memory device having a bitline segmented into bitline segments andrelated magnetic random access memory (MRAM) device.

A magnetic random access memory (MRAM) device is an emerging memorydevice which has better potential in terms of scaling to smaller cellareas in comparison with a static random access memory (SRAM) device.The MRAM device uses magnetic tunnel junctions (MTJs) as magnetic memorycells. An MTJ includes two ferromagnetic layers separated by a tunnelingbarrier layer which is an insulator. One ferromagnetic layer is a fixedlayer having a fixed magnetic moment direction, and the other is a freelayer whose magnetic moment direction can be altered to change aresistance state of the MTJ between a parallel state (the twoferromagnetic layers have the same magnetic moment direction) and ananti-parallel state (the two ferromagnetic layers are in differentmagnetic moment directions). With the aid of tunnelingmagneto-resistance (TMR), the resistance state of the MTJ can bedifferentiated, thus making the MTJ a magnetic memory cell.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a floor plan of an exemplary memory array layer of amemory device in accordance with some embodiments.

FIG. 2A is a diagram illustrating an exemplary memory device inaccordance with some embodiments of the present disclosure.

FIG. 2B is a 3D perspective view of a portion of the memory device shownin FIG. 2A in accordance with some embodiments of the presentdisclosure.

FIG. 3 illustrates circuit layers having different layouts in accordancewith some embodiments of the present disclosure.

FIG. 4 illustrates a memory device having a plurality of circuit layersemploying the different layouts shown in FIG. 3 in accordance with someembodiments of the present disclosure.

FIG. 5 illustrates exemplary bitline segment connection betweendifferent circuit layers shown in FIG. 4 in accordance with someembodiments of the present disclosure.

FIG. 6 is a diagram illustrating exemplary bitline segment connectionbetween different circuit layers shown in FIG. 4 in accordance with someembodiments of the present disclosure.

FIG. 7 illustrates circuit layers having different layouts in accordancewith some embodiments of the present disclosure.

FIG. 8 illustrates a memory device having a plurality of circuit layersemploying the different layouts shown in FIG. 7 in accordance with someembodiments of the present disclosure.

FIG. 9 illustrates exemplary wordline driving schemes associated withdifferent circuit layers according to some embodiments of the presentdisclosure.

FIG. 10 illustrates exemplary wordline driving schemes associated withdifferent circuit layers according to some embodiments of the presentdisclosure.

FIG. 11 is a flow chart of an exemplary method for operating a memorydevice in accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 illustrates a floor plan of an exemplary memory array layer of amemory device in accordance with some embodiments. The memory arraylayer 106 may include a plurality of memory cell arrays 108.1-108.4,which are also referred to as memory banks. Each memory cell arrayincludes a plurality of memory sections, each labeled SEC, and eachmemory section includes a plurality of magnetic memory cells (not shownin FIG. 1) arranged in rows and columns. Regarding each memory cellarray, magnetic memory cells in a same row are coupled to a samewordline (not shown in FIG. 1), and magnetic memory cells in a samecolumn are coupled to a same bitline (not shown in FIG. 1). Please notethat the memory array layer 106 shown in FIG. 1 can be implemented by amemory array layer of other types of memory devices, such as acapacitance-based memory device including capacitive memory cells or aresistance-based memory device including resistive memory cells. Suchmodifications are also fall within the scope of the present disclosure.

The memory array layer 106 may further include memory peripheralcircuitry, which includes, but is not limited to, pre-decoder circuitblocks (PRED), wordline driver circuit blocks (WLDR), pull-down circuitblocks (PD), amplifier circuit blocks (SA), column selection logic orcolumn multiplexer circuit blocks (YMUX), and write driver circuitblocks (WD). The pre-decoder circuit blocks, including row pre-decodersand column pre-decoders, are configured to decode row addresses andcolumn addresses. The wordline driver circuit blocks, coupled towordlines disposed on the memory array layer 106 (not shown in FIG. 1),are configured to activate the wordlines. One or more wordline drivercircuit blocks can further include final decoder circuit(s), configuredto provide final decoded signals used to drive wordlines.

The pull-down circuit blocks are configured to drive bitlines and sourcelines (not shown in FIG. 1) disposed on the memory array layer 106. Theamplifier circuit blocks, coupled to the bitlines, are configured tosense and amplify signals on the bitlines. By way of example but notlimitation, each amplifier circuit block may include one or moreamplifier circuits such as sense amplifiers. During a read operation, apull-down circuit block can drive a current to a magnetic memory cellthrough a bitline, and couple a source line which is coupled to themagnetic memory cell to a predetermined voltage such as a groundvoltage. In a voltage sensing scheme, a corresponding sense amplifiercan be configured to output read data by comparing a voltage, developedbetween the bitline and the source line, to a reference voltage. In acurrent sensing scheme, the corresponding sense amplifier can beconfigured to output read data by comparing the current, flowing throughthe magnetic memory cell, to a reference current.

Each column multiplexer circuit block is configured to couple onebitline in a memory section to a corresponding amplifier circuit block,allowing each memory section to output one data bit at a time andtherefore increasing the array efficiency of the memory array layer 106,i.e. an increased number of memory cells per unit area. Similarly, dataoutputted from a write driver circuit block can be written into acorresponding memory section through a corresponding column multiplexercircuit block. One or more write driver circuit blocks can include writecircuit(s) and write driver(s) configured to write data into memorycells.

Please note that, in order to obtain better array efficiency, anamplifier circuit block is coupled to a long bitline and hence shared bynumerous magnetic memory cells. However, a long bitline length resultsin increased bitline parasitic resistance. Since a resistance differencebetween an anti-parallel state and a parallel state of an MTJ of amagnetic memory cell is small, any parasitic resistance in a currentpath passing through the magnetic memory cell will tend to degrade thesensing ability. As a result, such long bitline not only increasesbitline parasitic resistance but also limits the array efficiency.

The present disclosure describes exemplary memory devices having aplurality of bitlines segmented into bitline segments, which are formedon different circuit layers disposed one above another and electricallyconnected through a plurality of conductive through via structurespenetrating the circuit layers. As a result, the exemplary memorydevices can allow more memory cells per bitline, which not only reducesbitline parasitic resistance but also translates into area saving, i.e.a higher number of memory cells per unit area. In some embodiments, theexemplary memory devices can include a capacitance-based memory device,a resistance-based memory device or other types of memory devices. Insome embodiments, circuit blocks of memory peripheral circuitry can bepartitioned into the circuit layers in different ways to furtherincrease array efficiency. The present disclosure further describesexemplary methods for operating the memory devices. In some embodiments,different circuit layers of an exemplary memory device may includedifferent types of circuit elements of memory peripheral circuitry, suchas amplifier circuits, bias circuits and write driver circuits. As aresult, data and signals may be transmitted through conductive throughvia structures penetrating the different circuit layers to completeread/write operation. Further description is provided below.

FIG. 2A is a diagram illustrating an exemplary memory device inaccordance with some embodiments of the present disclosure. The memorydevice 200 can be implemented by a capacitance-based memory device or aresistance-based memory device such as an MRAM device. The skilled inthe art will recognize that the memory device 200 can be implemented byother types of memory devices without departing from the scope of thepresent disclosure. In the present embodiment, the memory device 200 caninclude a plurality of circuit layers 202.1-202.N, a plurality of firstconductive through via structures 210.1-210.M, and a plurality ofbitlines 220.1-220.K. Each of N, M and K is an integer greater than one.The circuit layers 202.1-202.N, such as integrated circuit (IC) layersor memory array layers, are disposed one above another, and each circuitlayer may include one or more memory cell arrays. For the sake ofsimplicity, only one memory cell array 206 is illustrated in FIG. 2A.

The conductive through via structures 210.1-210.M may penetrate thoughthe circuit layers 202.1-202.N to provide electrical connection betweenthe circuit layers 202.1-202.N. At least one of the conductive throughvia structures 210.1-210.M may be a conductive through-substrate viastructure such as a through-silicon via (TSV) structure. For example,the conductive through via structure 210.1 may include TSVs eachextending between two adjacent circuit layers. However, those skilled inthe relevant art will recognize the conductive through via structures210.1-210.M can include other types of conductive through via structureswithout departing from the spirit and scope of the present disclosure.

Additionally, or alternatively, the memory device 200 may include aplurality of dielectric layers (not shown in FIG. 2A) interleaved withthe circuit layers 202.1-202.N, and each dielectric layer may bedisposed between two adjacent circuit layers. The conductive through viastructures 210.1-210.M may penetrate though the circuit layers202.1-202.N and the dielectric layers. For example, in some situationswhere the conductive through via structure 210.1 includes TSVs eachextending between two adjacent circuit layers, each TSV penetratesthrough a corresponding dielectric layer.

Each of the bitlines 220.1-220.K may include a plurality of bitlinesegments disposed on the circuit layers 202.1-202.N respectively, andthe bitline segments can be electrically connected through one of theconductive through via structures 210.1-210.M. Hence, a bitline can besegmented into N bitline segments using a conductive through viastructure. For example, the bitline 220.1 may include a plurality ofbitline segments BS_(1,1)-BS_(LN) disposed on the circuit layers202.1-202.N respectively, the bitline 220.2 may include a plurality ofbitline segments BS_(2,1)-BS_(2,N) disposed on the circuit layers202.1-202.N respectively, and the bitline 220.K may include a pluralityof bitline segments BS_(1,1)-BS_(K,N) disposed on the circuit layers202.1-202.N respectively. The conductive through via structures 210.1,210.2 and 210.K may be arranged to electrically connect the bitlinesegments BS_(1,1)-BS_(1,N), BS_(2,1)-BS_(2,N) and BS_(K,1)-BS_(K,N),respectively.

In some situations, at least a portion of the conductive through viastructures 210.1-210.M can be arranged to electrically connect othertypes of conductive/signal lines, such as wordlines or source lines,disposed on different circuit layers. In some situations, at least aportion of the conductive through via structures 210.1-210.M can bearranged to penetrate only a portion of the circuit layers 202.1-202.N.Those skilled in the art will recognize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure.

In the embodiment shown in FIG. 2A, each bitline segment of the bitlines220.1-220.K may be coupled to a plurality of memory cells of a memorycell array of a circuit layer where the bitline segment is disposed, andthe circuit layer further includes a plurality of wordlines associatedwith the bitline segment. With the aid of conductive through viastructures, bitline segments respectively disposed on the circuit layers202.1-202.N are electrically connected to form a bitline of athree-dimensional (3D) memory device such as a 3D MRAM device.

FIG. 2B is a 3D perspective view of a portion of the memory device 200shown in FIG. 2A in accordance with some embodiments of the presentdisclosure. For illustrative purposes, only the bitline 220.1 and aportion of associated wordlines are shown. Those skilled in the artwould understand that other bitlines shown in FIG. 2A and associatedwordlines can be disposed in a manner similar/identical to that shown inFIG. 2B. In the present embodiment, wordlines WL_(1,11) and WL_(1,12)disposed on the circuit layer 202.1 are associated with the bitlinesegment BS_(1,1) since each of the wordlines WL_(1,11) and WL_(1,12) iscoupled to a memory cell MC which is coupled to the bitline segmentBS_(1,1). Each memory cell MC coupled to the bitline segment BS_(1,1)can be accessed in response to activation of a corresponding wordline.

Similarly, a wordline WL_(1,21) disposed on the circuit layer 202.2 areassociated with the bitline segment BS_(1,2), a wordline WL_(1,31)disposed on the circuit layer 202.3 are associated with the bitlinesegment BS_(1,3), and a wordline WL_(1,N1) disposed on the circuit layer202.N are associated with the bitline segment BS_(1,N). Each memory cellcoupled to a bitline segment can be accessed in response to activationof a corresponding wordline. As the bitline segments BS_(1,1)-BS_(1,N)are electrically connected to form the bitline 220.1 with the aid of theconductive through via structures 210.1, each memory cell coupled to thebitline 220.1 can be accessed in response to activation of acorresponding wordline. Accordingly, the bitline 220.1 can serve as abitline of a 3D memory device, i.e. the memory device 200.

By connecting memory cells, or memory cell arrays, in different circuitlayers through conductive through via structures, the memory device 200can segment a bitline into multiple bitline segments, allowing morememory cells per bitline which translates into area saving. As a result,the memory device 200 can have an increased number of memory cells perunit area. In addition, different circuit layers of the memory device200 may include different circuit blocks of memory peripheral circuitry,thus further increasing the number of memory cells per unit area of acircuit layer. For example, different types of circuit blocks of memoryperipheral circuitry, such as the pull-down circuit blocks, theamplifier circuit blocks and the write driver circuit blocks shown inFIG. 1, can be partitioned into different circuit layers of the memorydevice 200. Furthermore, as a bitline of the memory device 200 can besegmented into bitline segments connected in a parallel manner, aparasitic resistance between two distant memory cells coupled to thesame bitline, e.g. two memory cells respectively connected to thebitline segment BS_(1,1) and BS_(1,N), can be greatly reduced. Comparedwith a two-dimensional (2D) memory device, which has only a singlecircuit layer and hence a limited number of cells per bitline, thememory device 200 can release the restrictions on the bitline length andbuild an efficient memory array in a 3D fashion by segmenting a 2Dmemory array layer along a bitline direction.

To facilitate understanding of the present disclosure, exemplary floorplans of circuit layers are given in the following for furtherdescription of a 3D memory device having segmented bitlines. Thoseskilled in the art should understand that other floor plans of circuitlayers can be used to form a 3D memory device employing the structureshown in FIG. 1 without departing from the scope of the presentdisclosure. Referring firstly to FIG. 3, circuit layers having differentlayouts TP1-TP3 are illustrated in accordance with some embodiments ofthe present disclosure. Each of the circuit layers shown in FIG. 3 canrepresent an embodiment of at least one of the circuit layers202.1-202.N shown in FIG. 2A. Also, each of the circuit layers shown inFIG. 3 can be implemented to include a portion of the memory array layer106 shown in FIG. 1.

The circuit layer having the layout TP1 may include a plurality ofmemory cell arrays 308.1-308.4, a peripheral circuit block 316.1, columnselection logic or a plurality of column multiplexer circuit blocks(YMUX), and a plurality of amplifier circuit blocks (SA) 326.1 and326.2. Each of the memory cell arrays 308.11-308.14, also referred to amemory bank, includes a plurality of memory sections (SEC). Each memorysection includes a plurality of memory cells (not shown in FIG. 3)arranged in rows and columns. Regarding each memory cell array, memorycells in a same row are coupled to a same wordline (not shown in FIG.3), and memory cells in a same column are coupled to a same bitlinesegment (not shown in FIG. 3) or a same bitline. The peripheral circuit316.1 can be implemented to include the pre-decoder circuits and thewordline driver circuits as illustrated in FIG. 1.

Each column multiplexer circuit block may include one or more columnmultiplexer circuits. Each column multiplexer circuit is configured tocouple one of bitline segments in a memory section to a correspondingamplifier circuit within an amplifier circuit block, allowing eachmemory section to output one data bit at a time and therefore increasingthe memory array efficiency. The amplifier circuit blocks 326.1 and326.2 can be implemented to include the amplifier circuit blocks shownin FIG. 1. Each amplifier circuit block can include one or moreamplifier circuits such as sense amplifiers. Filled dots in theamplifier circuit blocks 326.1 and 326.2 represent a portion ofconductive through via structures penetrating the circuit layer havingthe layout TP1, wherein the conductive through via structures can beimplemented by TSVs and serve as global input/output (I/O) lines.

In some embodiments, the circuit layer having the layout TP1 can employan open bitline architecture, where a pair of bitlines includes twobitlines located on either side of a shared sense amplifier. The openbitline architecture can achieve a high-density memory cell array. Forexample, in the open bitline architecture, two bitlines coupled to asense amplifier in the amplifier circuit block 326.1 are disposed in thememory cell arrays 308.1 and 308.2 respectively. In some otherembodiments, the circuit layer having the layout TP1 can employ a foldedbitline architecture, where a pair of bitlines sharing a same senseamplifier includes adjacent two bitlines. One of the two bitlines servesas a voltage reference when a memory cell connected to the other of thetwo bitlines is being accessed, thereby helping reduce common sourcenoise applied to the two bitlines. For example, in the folded bitlinearchitecture, two bitlines coupled to a sense amplifier in the amplifiercircuit block 326.1 are disposed in two of the memory sections of thememory cell array 308.1, respectively.

The floor plan of the circuit layer having the layout TP2 issimilar/identical to that of the circuit layer having the layout TP1except that the circuit layer having the layout TP2 includes a pluralityof write driver circuit blocks (WD) 336.1 and 336.2. The write drivercircuit blocks 336.1 and 336.2 can be implemented to include the writedriver circuit blocks shown in FIG. 1. Filled dots in the write drivercircuit blocks 336.1 and 336.2 represent a portion of conductive throughvia structures penetrating the circuit layer having the layout TP2,wherein the conductive through via structures can be implemented by TSVsand serve as global I/O lines.

Each write driver circuit block can include one or more write drivercircuits. Each write driver circuit can write data into a memory cell ina memory section through a corresponding column multiplexer circuit in acolumn multiplexer circuit block. In some embodiments, each write drivercircuit can include a write circuit and a write driver configured towrite data into memory cells. In addition, the peripheral circuit 316.2can be implemented to include the pre-decoder circuits and the wordlinedriver circuits as illustrated in FIG. 1.

The floor plan of the circuit layer having the layout TP3 is similar oridentical to that of the circuit layer having the layout TP1 except thatthe circuit layer having the layout TP3 includes a plurality ofpull-down circuit blocks (PD) 346.1 and 346.2. The pull-sown circuitblocks 346.1 and 346.2 can be implemented to include the pull-downcircuit blocks shown in FIG. 1. Filled dots in the pull-down circuitblocks 346.1 and 346.2 represent a portion of conductive through viastructures penetrating the circuit layer having the layout TP3, whereinthe conductive through via structures can be implemented by TSVs andserve as global I/O lines.

The circuit layers shown in FIG. 3 may be stacked on top of each other,or disposed one above another, to form a 3D memory device or a 3D memoryarray. Referring to FIG. 4, a memory device 400 having a plurality ofcircuit layers employing the different layouts TP1-TP3 shown in FIG. 3is illustrated in accordance with some embodiments of the presentdisclosure. The memory device 400 can represent an embodiment of thememory device 200 shown in FIG. 2A. In the present embodiment, thememory device 400 can include four circuit layers 402.1-402.4, which areelectrically connected through a plurality of conductive through viastructures {410}. The circuit layer 402.1 can employ the layout TP1shown in FIG. 3. The circuit layer 402.2 can employ the layout TP2 shownin FIG. 3. Each of the circuit layers 402.3 and 402.4 can employ thelayout TP3 shown in FIG. 3. As a result, amplifier circuit blocks of thememory device 400 are disposed on the circuit layer 402.1, write drivercircuit blocks of the memory device 400 are disposed on the circuitlayer 402.2, and pull-down circuit blocks of the memory device 400 aredisposed on the circuit layers 402.3 and 402.4. Please note that thenumber of circuit layers shown in FIG. 4 is for illustrative purposes. Amemory device having a different number of circuit layers also fallswithin the scope of the present disclosure. For example, a memory deviceemploying at least one of the layouts TP1-TP3 shown in FIG. 3 may have adifferent number of circuit layers. Also, at least one of the layoutsTP1-TP3 shown in FIG. 3 can be implemented by a circuit configurationdifferent from that shown in FIG. 4 without departing from the scope ofthe present disclosure. For example, at least one of the circuit layers402.1-402.4 can employ a circuit configuration different from that shownin FIG. 4. Such modifications are also fall within the scope of thepresent disclosure.

The memory device 400 can be implemented as an MRAM device, whichincludes a plurality of magnetic memory cells each implemented using onetransistor and one MTJ, i.e. a 1T-1MTJ bit-cell. A signal line coupledto a magnetic memory cell can be segmented into signal line segmentsdisposed on different circuit layers. When the signal line is selected,the signal line segments are selected and electrically connected to eachother. It should be noted that each magnetic cell can be implementedusing one or more transistors and one or more MTJs, such as 2T-1MTJ,1T-2MTJ, 2T-2MTJ or other bit-cell designs, without departing from thescope of the present disclosure. Also, the memory device 400 can beimplemented as other types of memory devices without departing from thescope of the present disclosure.

For example, a bitline coupled to a magnetic memory cell can besegmented into bitline segments, which are respectively disposed on thecircuit layers 402.1-402.4 and electrically connected through acorresponding conductive through via structure. A source line coupled toa magnetic memory cell can be segmented into source line segments, whichare respectively disposed on the circuit layers 402.1-402.4 andelectrically connected through a corresponding conductive through viastructure.

In the present embodiment, the bitline 420.1 can be segmented intobitline segments 420.11-420.14. The bitline segments 420.11-420.14 aredisposed on the circuit layers 402.1-402.4 respectively, andelectrically connected through a conductive through via structure 410.1.The source line 422.1 can be segmented into source line segments422.11-422.14. The source line segments 422.11-422.14 are disposed onthe circuit layers 402.1-402.4 respectively, and electrically connectedthrough a conductive through via structure 412.1. The memory cellC_(1,1), including an MTJ M_(1,1) and an access transistor T_(1,1)disposed on the circuit layer 402.1, is coupled to a wordline WL_(1,1),the bitline segment 420.11 and the source line segment 422.11. Thememory cell C_(2,1), including an MTJ M_(2,1) and an access transistorT_(2,1) disposed on the circuit layer 402.2, is coupled to a wordlineWL_(2,1), the bitline segment 420.12 and the source line segment 422.12.The memory cell C_(3,1), including an MTJ M_(3,1) and an accesstransistor T_(3,1) disposed on the circuit layer 402.3, is coupled to awordline WL_(3,1), the bitline segment 420.13 and the source linesegment 422.13. The memory cell C_(4,1), including an MTJ M_(4,1) and anaccess transistor T_(4,1) disposed on the circuit layer 402.4, iscoupled to a wordline WL_(4,1), the bitline segment 420.14 and thesource line segment 422.14.

Similarly, the bitline 420.2 can be segmented into bitline segments420.21-420.24. The bitline segments 420.21-420.24 are disposed on thecircuit layers 402.1-402.4 respectively, and electrically connectedthrough a conductive through via structure 410.2. The source line 422.2can be segmented into source line segments 422.21-422.24. The sourceline segments 422.21-422.24 are disposed on the circuit layers402.1-402.4 respectively, and electrically connected through aconductive through via structure 412.2. The memory cell C_(1,2),including an MTJ M_(1,2) and an access transistor T_(1,2) disposed onthe circuit layer 402.1, is coupled to a wordline WL_(1,2), the bitlinesegment 420.21 and the source line segment 422.21. The memory cellC_(2,2), including an MTJ M_(2,2) and an access transistor T_(2,2)disposed on the circuit layer 402.2, is coupled to a wordline WL_(2,2),the bitline segment 420.22 and the source line segment 422.22. Thememory cell C_(3,1), including an MTJ M_(3,1) and an access transistorT_(3,1) disposed on the circuit layer 402.3, is coupled to a wordlineWL_(3,2), the bitline segment 420.23 and the source line segment 422.23.The memory cell C_(4,1), including an MTJ M_(4,1) and an accesstransistor T_(4,1) disposed on the circuit layer 402.4, is coupled to awordline WL_(4,1), the bitline segment 420.24 and the source linesegment 422.24.

For illustrative purposes, only the bitlines 420.1 and 420.2, the sourcelines 422.1 and 422.2, and the conductive through via structures 410.1,410.2, 412.1 and 412.2 of the memory device 400 are shown, but otherbitlines, source lines and related can conductive through via structuresbe similarly created.

Circuit elements associated with the bitlines 420.1 and 420.2 and thesource lines 422.1 and 422.2 are described below. Please note that aportion of the circuit elements associated with the bitlines 420.1 and420.2 and the source lines 422.1 and 422.2 are not shown in FIG. 4 forthe sake of simplicity. For example, column multiplexer circuitsdisposed on the circuit layers 402.1-402.4, which can be embodiments ofa portion of the column multiplexer circuit blocks associated with thelayouts TP1-TP3 shown in FIG. 3, are not shown in FIG. 4 for the sake ofsimplicity, but will be described in detail later. In addition, thoseskilled in the art will recognize that the description which follows canapply to circuit elements associated with other bitlines and sourcelines disposed on the circuit layers 402.1-402.4.

In the present embodiment, the circuit layer 402.1 can include a senseamplifier (labeled SAP) 428, which can represent an embodiment of aportion of an amplifier circuit block shown in FIG. 3. When the bitline420.1 is selected during a read operation, the bitline segment 420.11can be electrically connected to the conductive through via structure410.1 and the sense amplifier 428 through a column multiplexer circuit(not shown in FIG. 4). When the bitline 420.2 is selected during a readoperation, the bitline segment 420.12 can be electrically connected tothe conductive through via structure 410.2 and the sense amplifier 428through a column multiplexer circuit (not shown in FIG. 4).

It is worth noting that, when the bitline 420.1 is selected, the bitlinesegments 420.12-420.14, disposed the circuit layers 402.2-402.4respectively, can also be coupled to the conductive through viastructure 410.1. As the conductive through via structure 410.1 canprovide electrical connection between the bitline segments 420.11-420.14of the bitline 420.1, an input terminal T₁ of the sense amplifier 428 isshared by the bitline segments 420.11-420.14 during a read operation.Similarly, when the bitline 420.2 is selected, the bitline segments420.22-420.24, disposed the circuit layers 402.2-402.4 respectively, canalso be coupled to the conductive through via structure 410.2. As aresult, an input terminal T₂ of the sense amplifier 428 is shared by thebitline segments 420.21-420.24 during a read operation.

In the present embodiment, the memory device 400 may employ an openbitline architecture to increase the array density. The bitline segment420.11 of the bitline 420.1 and the bitline segment 420.21 of thebitline 420.2 may be located on either side of the shared senseamplifier 428. As a result, the memory cells C_(1,1) and C_(1,2),coupled to the bitline segments 420.11 and 420.21 respectively, may bedisposed in different memory cell arrays, such as the memory cell arrays308.1 and 308.2 shown in FIG. 3. Furthermore, to increase accuracy ofdistinguishing a difference between respective resistances in ananti-parallel state and a parallel state of an MTJ in read operations,the memory device 400 may concurrently process a data signal of a datamemory cell and a related reference signal of a reference memory cell.By way of example but not limitation, when a memory cell coupled to thebitline 420.1 is to be read, the bitline 420.1 can serve as a databitline including data bitline segments, and the bitline 420.2 can serveas a reference bitline each including reference bitline segments. Eachmagnetic memory cell coupled to the data bitline is used as a datamemory cell, and each magnetic memory cell coupled to a referencebitline is used as a reference memory cell. As a result, the memorycells C_(1,1), C_(2,1), C_(3,1) and C_(4,1), coupled to the bitline420.1, may serve as data memory cells. The memory cells C_(1,2),C_(2,2), C_(3,2) and C₄₂, coupled to the bitline 420.2, may serve asreference memory cells.

It is should be noted that a bitline serving as a data bitline can be areference bitline in a different operating scenario, and that a bitlineserving as a reference bitline can be a data bitline in a differentoperating scenario. For example, when a memory cell coupled to thebitline 420.2 is to be read, the bitline 420.2 can serve as a databitline and the bitline 420.1 can serve as a reference bitline. As aresult, the memory cells C_(1,2), C_(2,2), C_(3,2) and C_(4,2) are usedas data memory cells, and the memory cells C_(1,1), C_(2,1), C_(3,1) andC_(4,1) are used as reference memory cells.

Regarding the circuit layer 402.2, a write driver circuit (labeled WDC)438 included therein can represent an embodiment of a portion of a writedriver circuit block shown in FIG. 3. When the bitline 420.1 is selectedduring a write operation, each of the bitline segments 420.11-420.14 ofthe bitline 420.1 can be electrically connected to the write drivercircuit 438 through a column multiplexer circuit (not shown in FIG. 4).When the bitline 420.2 is selected during a write operation, each of thebitline segments 420.21-420.24 of the bitline 420.2 can be electricallyconnected to the write driver circuit 438 through a column multiplexercircuit (not shown in FIG. 4).

The circuit layer 402.3 can include a pull-down circuit (labeled PDC1)447, which can represent an embodiment of a portion of a pull-downcircuit block shown in FIG. 3. In the present embodiment, the pull-downcircuit 447 can include one or more bias circuits (not shown in FIG. 4),such as current sources, to send a bias signal to one or more memorycells. The bias signal can be a voltage signal or a current signal. Whenthe bitline 420.1 is selected, each of the bitline segments420.11-420.14 of the bitline 420.1 can be electrically connected to thepull-down circuit 447 through a column multiplexer circuit (not shown inFIG. 4). When the bitline 420.2 is selected, each of the bitlinesegments 420.21-420.24 of the bitline 420.2 can be electricallyconnected to the pull-down circuit 447 through a column multiplexercircuit (not shown in FIG. 4).

The circuit layer 402.4 can include a pull-down circuit (labeled PDC2)448, which can represent an embodiment of a portion of a pull-downcircuit block shown in FIG. 3. In the present embodiment, the pull-downcircuit 448 can include pull-down transistors (not shown in FIG. 4) eachconfigured to couple a corresponding source segment to a predeterminedvoltage VDD or a predetermined voltage VSS. When the source line 422.1is selected, the conductive through via structure 412.1 can provideelectrical connection between the source line segments 422.11-422.14 ofthe source line 422.1, and each of the source line segments422.11-422.14 can be electrically connected to the pull-down circuit 448through a column multiplexer circuit (not shown in FIG. 4). When thesource line 422.2 is selected, the conductive through via structure412.2 can provide electrical connection between the source line segments422.21-422.24 of the source line 422.1, and each of the source linesegments 422.21-422.24 can be electrically connected to the pull-downcircuit 448 through a column multiplexer circuit (not shown in FIG. 4).As a result, the pull-down circuit 448 disposed on the circuit layer402.4 can be shared with the circuit layers 402.1-402.3.

As the amplifier circuit blocks, the write driver circuit blocks and thepull-down circuit blocks of the memory device 400 are disposed on thedifferent circuit layers 402.1-402.4, data and signals may betransmitted through the conductive through via structures {410} tocomplete read/write operation.

In some embodiments, during a read operation where data stored in thememory cell C_(1,1) on the circuit layer 402.1 is to be read, thebitline segments 420.11 and 420.21, serving as a data bitline and areference bitline respectively, are selected. The source line segments422.11 and 422.21, coupled to the memory cells C_(1,1) and C_(1,2), arealso selected. In addition, the wordline WL_(1,1) is activated to turnon the access transistor T_(1,1), and the wordline WL_(1,2) is activatedto turn on the access transistor T₁₂ of the magnetic memory cellC_(1,2). The pull-down circuit 447 on the circuit layer 402.3 isconfigured to send a bias signal to the MTJ M_(1,1) of the magneticmemory cell C_(1,1) through the conductive through via structure 410.1,and is configured to drive a bias signal to the MTJ M_(1,2) of themagnetic memory cell C_(1,2) through the conductive through viastructure 410.2. The pull-down circuit 448 on the circuit layer 402.4 isconfigured to couple the source line segments 422.11 and 422.12 to thepredetermined voltage VSS, such as a ground voltage, through theconductive through via structures 412.1 and 412.2 respectively. As aresult, the sense amplifier 428 on the circuit layer 402.1 may generatean output signal SO according to a voltage signal VD₁ and a voltagesignal VR₁, developed at the memory cells C_(1,1) and C_(1,2)respectively, thereby determining a resistance state of the MTJ M_(1,1).The voltage signal VD₁ serves as a data signal generated in response tothe bias signal sent to the memory cell C_(1,1), and the voltage signalVR₁ serves as a reference signal generated in response to the biassignal sent to the memory cell C_(1,2).

It is worth noting that the pull-down circuit 447 is electricallyconnected to the magnetic memory cell C_(1,1) through the conductivethrough via structure 410.1 rather than a long bitline. Compared to a 2DMRAM device, which has a large parasitic wiring resistance in a currentpath for a far-end memory cell because of a long bitline, a parasiticwiring resistance in a current path from the pull-down circuit 447 tothe memory cell C_(1,1) is relatively small. Similarly, a parasiticwiring resistance in a current path from the bias circuit of thepull-down circuit 447 to the memory cell C_(1,2) is small. As a result,a difference between respective resistances in an anti-parallel stateand a parallel state of the MTJ M_(1,1) can be accurately distinguished.

In some other embodiments, during a read operation where data stored inthe memory cell C_(3,1) on the circuit layer 402.3 is to be read, thebitline segments 420.31 and 420.32, serving as a data bitline and areference bitline respectively, are selected. The source line segments422.31 and 422.32, coupled to the memory cells C_(3,1) and C_(3,2), arealso selected. The wordline WL_(3,1) is activated to turn on the accesstransistor T_(3,1), and the wordline WL_(3,2) is activated to turn onthe access transistor T_(3,2) of the memory cell C_(3,2). In addition,the pull-down circuit 447 is configured to drive a current to the MTJM_(3,1) of the magnetic memory cell C_(3,1), and is configured to drivea current to the MTJ M_(3,2) of the magnetic memory cell C_(3,2). Thepull-down circuit 448 on the circuit layer 402.4 is configured to couplethe source line segments 422.31 and 422.32 to the predetermined voltageVSS through the conductive through via structures 412.1 and 412.2,respectively. As a result, the sense amplifier 428 on the circuit layer402.1 may generate the output signal SO according to a voltage signalVD₃ and a voltage signal VR₃, developed at the memory cells C_(3,1) andC_(3,2) respectively, thereby determining a resistance state of the MTJM_(3,1).

Similarly, a parasitic wiring resistance in a current path from themagnetic memory cell C_(3,1)/C_(3,2) to the sense amplifier 428 isrelatively small since the sense amplifier 428 is electrically connectedto the magnetic memory cell C_(3,1)/C_(3,2) through the conductivethrough via structure 410.1/410.2 rather than a long bitline. Adifference between respective resistances in an anti-parallel state anda parallel state of the MTJ M_(3,1) can be accurately distinguished. Asa result, the memory device 400 employing a segmented bitline structurecan have a large number of memory cells per bitline while maintainingdata accuracy.

In some embodiments, the memory device 400 may operate in a write modewhere the write driver circuit 438 on the circuit layer 402.2 isconfigured to write data into memory cells. By way of example but notlimitation, during a write operation where a low resistance state, i.e.“0”, is to be written into the memory cell C_(4,1) on the circuit layer402.4, the bitline 420.1 is selected such that the bitline segment420.41 is coupled to the write driver circuit 438 through the conductivethrough via structure 410.1. In addition, the wordline WL_(4,1) isactivated to turn on the access transistor T_(4,1). With the use of theconductive through via structure 410.1, the write driver circuit 438 onthe circuit layer 402.2 can drive a data signal to the bitline segment420.41, thereby steering a current which flows from a fixed layer to afree layer of the MTJ M_(4,1) on the circuit layer 302.4. The bitlinesegment 420.41, or the bitline 420.1, can be charged to thepredetermined voltage VDD such as a supply voltage. Additionally, thepull-down circuit 448 is configured to couple the source line segment422.41, or the source line 422.1, to the predetermined voltage VSS suchas a ground voltage. As a result, the MTJ M_(4,1) can be programmed intoparallel configuration.

As another example, during a write operation where a high resistancestate, i.e. “1”, is to be written into the magnetic memory cell C_(4,1)on the circuit layer 402.4, the bitline 420.1 is selected, and thewordline WL_(4,1) is activated to turn on the access transistor T_(4,1).The write driver circuit 438 is configured to drive a data signal to thebitline segment 420.41, thereby steering a current which flows from thefree layer to the fixed layer of the MTJ M_(4,1). The bitline 420.1 canbe discharged to the predetermined voltage VSS. Additionally, thepull-down circuit 448 is configured to couple the source lines 422.1 tothe predetermined voltage VDD. As a result, the MTJ M_(4,1) can beprogrammed into anti-parallel configuration.

Please note that the circuit layers 402.1-402.4 shown in FIG. 4 can bestacked in different manners to form a 3D memory device withoutdeparting from the spirit and scope of the present disclosure.

FIG. 5 illustrates exemplary bitline segment connection betweendifferent circuit layers shown in FIG. 4 in accordance with someembodiments of the present disclosure. For illustrative purposes, thecircuit layers 402.2 and 402.4 are not shown here. The skilled in theart will recognize that the description that follows can be used toelectrically connect segmented bitlines disposed on any two of thecircuit layers 402.1-402.4 shown in FIG. 4. Also, the description thatfollows can be used to electrically connect segmented bitlines disposedon any two of the circuit layers 202.1-202.N as described above in FIG.2A.

In the present embodiment, the circuit layer 402.1 can include aplurality of sense amplifiers 528.1-528.A, a plurality of bitlineselectors 516.1-516.A, and a plurality of bitline selectors 518.1-518.A,where A is a positive integer greater than one. One of the senseamplifiers 528.1-528.A can represent an embodiment of the senseamplifier 428 shown in FIG. 4. One of the bitline selectors 516.1-516.Acan represent an embodiment of a column multiplexer circuit coupled tothe input terminal T₁ of the sense amplifier 428 shown in FIG. 4. One ofthe bitline selectors 518.1-518.A can represent an embodiment of acolumn multiplexer circuit coupled to the input terminal T₂ of the senseamplifier 428 shown in FIG. 4. One of bitline segments 511.1-511.B (B isa positive integer greater than one) can represent an embodiment of thebitline segment 420.11 shown in FIG. 4. One of bitline segments513.1-513.B can represent an embodiment of the bitline segment 420.12shown in FIG. 4.

The circuit layer 402.3 can include a plurality of bitline selectors536.1-536.A and a plurality of bitline selectors 538.1-538.A. One of thebitline selectors 536.1-536.A can represent an embodiment of a columnmultiplexer circuit coupled to the conductive through via structure410.1 shown in FIG. 4. One of the bitline selectors 538.1-538.A canrepresent an embodiment of a column multiplexer circuit coupled to theconductive through via structure 410.2 shown in FIG. 4. One of bitlinesegments 531.1-531.B can represent an embodiment of the bitline segment420.21 shown in FIG. 4. One of bitline segments 533.1-533.B canrepresent an embodiment of the bitline segment 420.21 shown in FIG. 4.

The circuit layer 402.3 is electrically connected to the circuit layer402.1 through conductive through via structures 510.1-510.A and512.1-512.A. One of the conductive through via structures 510.1-510.Acan represent an embodiment of the conductive through via structure410.1 shown in FIG. 4. One of the conductive through via structures512.1-512.A can represent an embodiment of the conductive through viastructure 410.2 shown in FIG. 4.

In the present embodiment, a bitline segment disposed on the circuitlayer 402.1 is electrically connected to a bitline segment disposed onthe circuit layer 402.3 after column multiplexing. One of the bitlineselectors 516.1-516.A is configured to couple one of bitline segmentsdisposed on the circuit layer 402.1 to a corresponding conductivethrough via structure, and one of the bitline selectors 536.1-536.A isconfigured to couple one of bitline segments disposed on the circuitlayer 402.3 to the same conductive through via structure. For example,the bitline segment 511.1 and the bitline segment 531.1 can be segmentedfrom a same bitline. When the bitline is selected, the bitline selector516.1 can be configured to couple the bitline segment 511.1 to theconductive through via structure 510.1, and the bitline selector 536.1can be configured to couple the bitline segment 531.1 to the conductivethrough via structure 510.1 such that the bitline segment 511.1 and thebitline segment 531.1 are electrically connected. The bitline segments513.1-513.B on the circuit layer 402.1 can be electrically connected tothe bitline segments 533.1-533.B on the circuit layer 402.3 in asimilar/identical manner.

As different bitline segments coupled to a same bitline selector canshare a same conductive through via structure, the number of conductivethrough via structures can be reduced. By way of example but notlimitation, in some embodiments where each of the bitline selectors516.1-516.A is configured to couple one of eight bitline segments to acorresponding sense amplifier, the number of sense amplifiers coupled tothe bitline selectors 516.1-516.A, as well as the number of conductivethrough via structures coupled to the bitline selectors 516.1-516.A,would be equal to one-eighth of the number of bitline segments coupledto the bitline selectors 516.1-516.A, i.e. A=B/8.

In addition, as a sense amplifier of the circuit layer 402.1 can beelectrically connected to a bitline selector of the circuit layer 402.3through a conductive through via structure, the sense amplifier on thecircuit layer 402.1 can receive data outputted from a memory cell of thecircuit layer 402.3. For example, the sense amplifier 528.1 of thecircuit layer 402.1 can be electrically connected to the bitlineselector 536.1 of the circuit layer 402.3 through the conductive throughvia structure 510.1 such that the sense amplifier 528.1 may receive dataoutputted from the circuit layer 402.3.

In some embodiments, the bitline segment connection between two circuitlayers shown in FIG. 5 can be used to electrically connect one circuitlayer including write driver circuits, such as the circuit layer 402.2shown in FIG. 4, to another circuit layer. For example, a bitlinesegment 420.21/420.22 disposed on the circuit layer 402.2 shown in FIG.4 can be electrically connected to a bitline segment disposed on adifferent circuit layer shown in FIG. 4 after column multiplexing. Inthese embodiments, the bitline segment connection between the circuitlayer 402.2 and the different circuit layer is similar/identical to thatshown in FIG. 5 except that the sense amplifiers shown in FIG. 5 arereplaced with the write driver circuits.

In some embodiments, the bitline segment connection between two circuitlayers shown in FIG. 5 can be used to electrically connect one circuitlayer including pull-down circuits, such as the circuit layer402.3/403.4 shown in FIG. 4, to another circuit layer. For example, abitline segment 420.31/420.32 disposed on the circuit layer 402.3 shownin FIG. 4 can be electrically connected to a bitline segment disposed ona different circuit layer shown in FIG. 4 after column multiplexing. Inthese embodiments, the bitline segment connection between the circuitlayer 402.3 and the different circuit layer is similar/identical to thatshown in FIG. 5 except that the sense amplifiers shown in FIG. 5 arereplaced with the pull-down circuits.

It should be noted that the bitline segment connection between twocircuit layers shown in FIG. 5 can be used to electrically connect othertypes of segmented signal lines, such as segmented source lines,disposed on any two of the circuit layers 402.1-402.4 shown in FIG. 4,or the circuit layers 202.1-202.N as described above in FIG. 2A, withoutdeparting from the scope of the present disclosure.

In some embodiments, bitline segmentation may be applied to circuitlayers without column multiplexing. Referring to FIG. 6, exemplarybitline segment connection between different circuit layers shown inFIG. 4 is illustrated in accordance with some embodiments of the presentdisclosure. The circuit arrangement shown in FIG. 6 is similar to thatshown in FIG. 5 except that segmented bitlines shown in FIG. 6 areelectrically connected before column multiplexing. Similar to thecircuit arrangement FIG. 5, the circuit layers 402.2 and 402.4 are notshown in FIG. 6 for illustration and simplicity. It should be noted thatthe description that follows can be used to electrically connectsegmented bitlines disposed on any two of the circuit layers 402.1-402.4shown in FIG. 4. Also, the description that follows can be used toelectrically connect segmented bitlines disposed on any two of thecircuit layers 202.1-202.N as described above in FIG. 2A.

In the present embodiment, the circuit layer 402.3 is electricallyconnected to the circuit layer 402.1 through conductive through viastructures 610.1-610.0 and 612.1-612.C, where C is a positive integergreater than one. One of the conductive through via structures610.1-610.0 can represent an embodiment of the conductive through viastructure 410.1 shown in FIG. 4. One of the conductive through viastructures 612.1-612.0 can represent an embodiment of the conductivethrough via structure 410.2 shown in FIG. 4.

As shown in FIG. 6, bitline segments of a same bitline are connectedthrough a corresponding conductive through via structure before bitlineselection. Each bitline selector includes a plurality of input terminalsand an output terminal. The input terminals are electrically connectedto a plurality of conductive through via structures respectively, andthe bitline selector is configured to couple one of the input terminalsto the output terminal. For example, the bitline segment 511.1 and thebitline segment 531.1 can be segmented from a same bitline with the useof the conductive through via structure 610.1. When the bitline isselected, the bitline selector 516.1 can be configured to couple aninput terminal NI to an output terminal NT since the bitline segment511.1, the bitline segment 531.1 and the conductive through viastructure 610.1 are electrically connected at the input terminal NI. Thebitlines associated with the bitline segment 513.1-513.A and 533.1-533.Acan be selected in a similar/identical manner.

As an input terminal of a bitline selector of the circuit layer 402.1can be electrically connected to the circuit layer 402.3 through aconductive through via structure, a sensor amplifier of the circuitlayer 402.1, coupled to an output terminal of the bitline selector, canbe electrically connected to the circuit layer 402.3 with the use ofbitline selection. For example, the sense amplifier 528.1 of the circuitlayer 402.1 can be electrically connected to a bitline segment on thecircuit layer 402.3, such as the bitline segment 531.1, through thebitline selector 536.1 and a corresponding conductive through viastructure. As a result, the sense amplifier 528.1 can receive dataoutputted from the circuit layer 402.3.

In some embodiments, the bitline segment connection between two circuitlayers shown in FIG. 6 can be used to electrically connect one circuitlayer including write driver circuits, such as the circuit layer 402.2shown in FIG. 4, to another circuit layer. For example, a bitlinesegment 420.21/420.22 disposed on the circuit layer 402.2 shown in FIG.4 can be electrically connected to a bitline segment disposed on adifferent circuit layer shown in FIG. 4 before column multiplexing. Inthese embodiments, the bitline segment connection between the circuitlayer 402.2 and the different circuit layer is similar/identical to thatshown in FIG. 6 except that the sense amplifiers shown in FIG. 6 arereplaced with the write driver circuits.

In some embodiments, the bitline segment connection between two circuitlayers shown in FIG. 6 can be used to electrically connect one circuitlayer including pull-down circuits, such as the circuit layer402.3/403.4 shown in FIG. 4, to another circuit layer. For example, abitline segment 420.31/420.32 disposed on the circuit layer 402.3 shownin FIG. 4 can be electrically connected to a bitline segment disposed ona different circuit layer shown in FIG. 4 before column multiplexing. Inthese embodiments, the bitline segment connection between the circuitlayer 402.3 and the different circuit layer is similar/identical to thatshown in FIG. 6 except that the sense amplifiers shown in FIG. 6 arereplaced with the pull-down circuits.

It should be noted that the bitline segment connection between twocircuit layers shown in FIG. 6 can be used to electrically connect othertypes of segmented signal lines, such as segmented source lines,disposed on any two of the circuit layers 402.1-402.4 shown in FIG. 4,or the circuit layers 202.1-202.N as described above in FIG. 2A, withoutdeparting from the scope of the present disclosure.

In some embodiments, amplifier circuit blocks, write driver circuitblocks and pull-down circuit blocks can be disposed on a same circuitlayer of a 3D memory device. Referring firstly to FIG. 7, circuit layershaving different layouts TP1′ and TP2′ are illustrated in accordancewith some embodiments of the present disclosure. Each of the circuitlayers shown in FIG. 7 can represent an embodiment of at least one ofthe circuit layers 202.1-202.N shown in FIG. 2A. Also, each of thecircuit layers shown in FIG. 7 can be implemented to include a portionof the memory array layer 106 shown in FIG. 1.

The circuit layer having the layout TP1′ may include a plurality ofmemory cell arrays 708.1-708.4, a peripheral circuit block 716.1, columnselection logic or a plurality of column multiplexer circuit blocks(YMUX), a plurality of amplifier circuit blocks (SA) 726.1 and 726.2, aplurality of write driver circuit blocks (WD) 736.1 and 736.2, and aplurality of pull-down circuit blocks (PD) 746.1-746.4. Filled dots inthe center region of the layout TP1′ represent a portion of conductivethrough via structures penetrating the circuit layer having the layoutTP1′, wherein the conductive through via structures can be implementedby TSVs and serve as global I/O lines.

Each of the memory cell arrays 708.1-708.4, also referred to a memorybank, includes a plurality of memory sections (SEC). Each memory sectionincludes a plurality of memory cells (not shown in FIG. 7) arranged inrows and columns. Regarding each memory cell array, memory cells in asame row are coupled to a same wordline (not shown in FIG. 7), andmemory cells in a same column are coupled to a same bitline segment (notshown in FIG. 7) or a same bitline. The peripheral circuit 716.1 can beimplemented to include the pre-decoder circuits and the wordline drivercircuits as illustrated in FIG. 1.

Each column multiplexer circuit block may include one or more columnmultiplexer circuits. Each column multiplexer circuit is configured tocouple one of bitline segments in a memory section to a correspondingamplifier circuit within an amplifier circuit block, allowing eachmemory section to output one data bit at a time and therefore increasingthe memory array efficiency. The amplifier circuit blocks 726.1 and726.2 can be implemented to include the amplifier circuit blocks shownin FIG. 1. Each amplifier circuit block can include one or moreamplifier circuits such as sense amplifiers. In some embodiments, thecircuit layer having the layout TP1′ can employ an open bitlinearchitecture, where a pair of bitlines includes two bitlines located oneither side of a shared sense amplifier. In some other embodiments, thecircuit layer having the layout TP1′ can employ a folded bitlinearchitecture, where a pair of bitlines sharing a same sense amplifierincludes adjacent two bitlines.

The write driver circuit blocks 736.1 and 736.2 can be implemented toinclude the write driver circuit blocks shown in FIG. 1. Each writedriver circuit block can include one or more write driver circuits. Eachwrite driver circuit can write data into a memory cell in a memorysection through a corresponding column multiplexer circuit in a columnmultiplexer circuit block. In some embodiments, each write drivercircuit can include a write circuit and a write driver configured towrite data into memory cells.

The pull-down circuit blocks 746.1-746.4 can be implemented to includethe pull-down circuit blocks shown in FIG. 1. Each pull-down circuitblock can include one or more pull-down circuits, such as bias circuitsand pull-down transistors.

The floor plan of the circuit layer having the layout TP2′ issimilar/identical to that of the circuit layer having the layout TP1′except that amplifier circuit blocks, write driver circuit blocks andpull-down circuit blocks can be omitted. Filled dots in the centerregion of the layout TP2′ represent a portion of conductive through viastructures penetrating the circuit layer having the layout TP2′, whereinthe conductive through via structures can be implemented by TSVs andserve as global I/O lines. In addition, the peripheral circuit 716.2 canbe implemented to include the pre-decoder circuits and the wordlinedriver circuits as illustrated in FIG. 1.

The circuit layers shown in FIG. 7 may be stacked on top of each other,or disposed one above another, to form a 3D memory device or a 3D memoryarray. Referring to FIG. 8, a memory device 800 having a plurality ofcircuit layers employing the different layouts TP1′-TP2′ shown in FIG. 7is illustrated in accordance with some embodiments of the presentdisclosure. The memory device 800 can represent an embodiment of thememory device 200 shown in FIG. 2A. In the present embodiment, thememory device 800 can include four circuit layers 802.1-802.4, which areelectrically connected through a plurality of conductive through viastructures {810}. The circuit layer 802.1 can employ the layout TP1′shown in FIG. 7. Each of the circuit layers 802.2-802.4 can employ thelayout TP2′ shown in FIG. 7.

Circuit structure and access operation of the memory device 800 can besimilar to that of the memory device 400 except that amplifier circuitblocks, write driver circuit blocks and pull-down circuit blocks of thememory device 800 are disposed on the same circuit layer 802.1. By wayof example but not limitation, the circuit layer 802.1 can include thesense amplifier (labeled SAP) 428, the write driver circuit (labeledWDC) 438, the pull-down circuit (labeled PDC1) 447 and the pull-downcircuit (labeled PDC2) 448 shown in FIG. 4. In some embodiments, bitlinesegments of any two of the circuit layers 802.1-802.4 can beelectrically connected using the bitline segment connection shown inFIG. 5. In some other embodiments, bitline segments of any two of thecircuit layers 802.1-802.4 can be electrically connected using thebitline segment connection shown in FIG. 6. Please note that when thebitline segment connection shown in FIG. 6 is employed in the circuitlayers 802.1-802.4, the column multiplexer circuit blocks of the circuitlayer 802.2-802.4 may be removed.

Additionally or alternatively, in some embodiments, it is possible todispose at least one of the circuit layers 402.1-402.4 shown in FIG. 4and at least one of the circuit layers 802.1-802.4 shown in FIG. 8 oneabove another to form a memory device. Those skilled in the art shouldrecognize that such equivalent constructions do not depart from thespirit and scope of the present disclosure.

In some embodiments, conductive through via structures in a 3D memorydevice may be used for transmitting wordline address signals betweendifferent circuit layers. FIG. 9 and FIG. 10 illustrate exemplarywordline driving schemes associated with different circuit layersaccording to some embodiments of the present disclosure. The descriptionthat follows can be used to drive wordlines disposed on differentcircuit layers, such as the circuit layers 202.1-202.N shown in FIG. 2A,the circuit layers 402.1-402.4 shown in FIG. 4 and the circuit layers802.1-806.4 shown in FIG. 8.

Referring to FIG. 9, a memory device 900 having a plurality of circuitlayers disposed one above another are illustrated in accordance withsome embodiments of the present disclosure. The memory device 900 canrepresent an embodiment of the memory device 200 shown in FIG. 2A. Inthe present embodiment, the memory device 900 includes a plurality ofcircuit layers 902.1 and 902.2, a plurality of conductive through viastructures 910.1-910.E (E is an integer greater than one) penetratingthrough the circuit layers 902.1 and 902.2, a plurality of bitlinesegments {911} and {912}, and a plurality of wordlines 915.1-915.E and916.1-916.E. Each of the circuit layers 902.1 and 902.2 can represent anembodiment of any circuit layer as described above. The conductivethrough via structures 910.1-910.E can represent an embodiment of aportion of the conductive through via structures 210.1-210.M asillustrated in FIG. 2A.

The bitline segments {911} and the wordlines 915.1-915.E are disposed onthe circuit layer 902.1, and the bitline segments {912} and thewordlines 916.1-916.E are disposed on the circuit layer 902.2. Each ofthe circuit layers 902.1 and 902.2 can include a wordline drivercircuit, i.e. one of wordline driver circuits 905 and 906. The wordlinedriver circuit can represent an embodiment of a portion of a wordlinedriver circuit block shown in FIG. 1. The wordline driver circuit 905 isconfigured to drive the wordlines 915.1-915.E disposed on the circuitlayer 902.1. The wordline driver circuit 906 is configured to drive thewordlines 916.1-916.E disposed on the circuit layer 902.2. In thepresent embodiment, the conductive through via structures 910.1-910.Eare connected between the wordline driver circuits 905 and 906, suchthat the wordline driver circuits 905 and 906 can be configured to sharea common wordline address input, e.g. pre-decoded or decoded wordlineaddresses, on the conductive through via structures 910.1-910.E.

In some embodiments, wordlines disposed on one circuit layer may bedriven by a wordline driver circuit of another circuit layer. Referringto FIG. 10, a memory device 1000 having a plurality of circuit layersdisposed one above another are illustrated in accordance with someembodiments of the present disclosure. The memory device 1000 canrepresent an embodiment of the memory device 200 as illustrated in FIG.2A. In this embodiment, the memory device 1000 includes a plurality ofcircuit layers 1002.1 and 1002.2, a plurality of conductive through viastructures 1010.1-1010.F penetrating through the circuit layers 1002.1and 1002.2, a plurality of bitline segments {1011} and {1012}, and aplurality of wordlines 1015.1-1015.G and 1016.1-1016.F. Each of F and Gis an integer greater than one. Each of the circuit layers 1002.1 and1002.2 can represent an embodiment of any circuit layer as describedabove. The conductive through via structures 1010.1-1010.F can representan embodiment of a portion of the conductive through via structures210.1-210.M as illustrated in FIG. 2A.

The bitline segments {1011} and the wordlines 1015.1-1015.G are disposedon the circuit layer 1002.1, and the bitline segments {1012} and thewordlines 1016.1-1016.F are disposed on the circuit layer 1002.2. Thecircuit layer 1002.1 can include a plurality of wordline driver circuits1005 and 1006, which can represent an embodiment of a portion of awordline driver circuit block shown in FIG. 1. The wordline drivercircuit 1005 is configured to drive the wordlines 1015.1-1015.G disposedon the circuit layer 1002.1. Since the conductive through via structures1010.1-1010.F are electrically connected between the wordline drivercircuit 1006 and the wordlines 1016.1-1016.F disposed on the secondcircuit layer 1002.2, the wordline driver circuit 1006 can be configuredto drive the wordlines 1016.1-1016.F according to a wordline addressinput on the conductive through via structures 1010.1-1010.F.

In some embodiments, it is possible to dispose first circuit layers,which are implemented by the circuit layers 902.1 and 902.2 shown inFIG. 9, and second circuit layers, which are implemented by the circuitlayers 1002.1 and 1002.2 shown in FIG. 10, to form a memory devicehaving stacked circuit layers. Those skilled in the art should recognizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure.

With the use of conductive through via structures, circuit blocks of thememory peripheral circuitry shown in FIG. 1 can be partitioned intodifferent circuit layers, thereby forming a 3D memory device havingincreased array efficiency and reduced parasitic resistance.

FIG. 11 is a flow chart of an exemplary method for operating a memorydevice according to an exemplary embodiment of the present disclosure.For illustrative purposes, the method 1100 is described with referenceto the memory device 400 shown in FIG. 4. Those skilled in the art willrecognize that the method 1100 can be employed in other types of memorydevices having segmented signal lines, such as the memory device 200shown in FIG. 2A and the memory device 800 shown in FIG. 8, withoutdeparting from the scope of the present disclosure. Additionally, insome embodiments, other operations in the method 1100 can be performedand operations of the method 1100 can be performed in a different orderand/or vary.

At operation 1102, a first bitline segment and a second bitline segmentof a selected bitline, respectively disposed on a first circuit layerand a second circuit layer of the memory device stacked one over theother, is electrically connected to a bias circuit disposed on thesecond circuit layer through a conductive through via structure. Theconductive through via structure is formed between the first circuitlayer and the second circuit layer. For example, during a read operationwhere data stored in the memory cell C_(1,1) on the circuit layer 402.1is to be read, the bitline 420.1 is selected such that the bitlinesegments 420.11-420.41 are electrically connected to the pull-downcircuit 447 on the circuit layer 402.3 through the conductive throughvia structures 412.1

At operation 1104, the bias circuit on the second circuit layer isutilized to send a bias signal to a memory cell, disposed on the firstcircuit layer, through the conductive through via structure and thefirst bitline segment coupled to the memory cell. A data signal of thememory cell is generated in response to the bias signal. For example,during a read operation where data stored in the memory cell C_(1,1) onthe circuit layer 402.1 is to be read, the pull-down circuit 447 on thecircuit layer 402.3 is configured to send a bias signal, such as acurrent signal or a voltage signal, to the memory cell C_(1,1) throughthe conductive through via structure 412.1 and the bitline segment420.11. The voltage signal VD₁ of the memory cell C_(1,1) is generatedin response to the bias signal.

At operation 1106, data stored in the memory cell is determined bycomparing the data signal with a reference signal. For example, during aread operation where data stored in the memory cell C_(1,1) on thecircuit layer 402.1 is to be read, a resistance state of the MTJ M_(1,1)can be determined by comparing the voltage signal VD₁ and the voltagesignal VR₁.

In some embodiments, the first bitline segment and the second bitlinesegment can be electrically connected to the bias circuit by couplingeach of the first bitline segment and the second bitline segment to theconductive through via structure. For example, the memory device 400 mayemploy bitline segment connection shown in FIG. 5 during a memory accessoperation. However, in some other embodiments, segmented bitlines canare electrically connected before column multiplexing. For example, thememory device 400 may employ bitline segment connection shown in FIG. 6during a memory access operation.

By connecting memory cells in different circuit layers throughconductive through via structures, a bitline can be segmented intomultiple bitline segments respectively disposed on the different circuitlayers, thus providing a 3D memory device having more memory cells perbitline and reduced parasitic resistance. In addition, circuit blocks ofmemory peripheral circuitry can be partitioned into different circuitlayers of the 3D memory device in different ways, increasing designflexibility and reducing a circuit area of a circuit layer.

Some embodiments described herein may include a memory device thatincludes a plurality of circuit layers, a plurality of first conductivethrough via structures and a plurality of bitlines. The circuit layersare disposed one above another, and each circuit layer includes one ormore memory cell arrays. The first conductive through via structurespenetrate though the circuit layers. Each bitline includes a pluralityof bitline segments disposed on the circuit layers respectively, thebitline segments are electrically connected through one of the firstconductive through via structures, and each bitline segment is coupledto a plurality of memory cells of a memory cell array of a circuit layerwhere the bitline segment is disposed.

Some embodiments described herein may include a memory device thatincludes a plurality of circuit layers, a plurality of conductivethrough via structure, a data bitline and a reference bitline. Thecircuit layers are disposed one above another, each circuit layerincludes one or more memory cell arrays, and a first circuit layer ofthe circuit layers includes an amplifier circuit. The conductive throughvia structures penetrate though the circuit layers, and the conductivethrough via structures include a first conductive through via structureand a second conductive through via structure. The data bitline has aplurality of data bitline segments disposed on the circuit layersrespectively, the data bitline segments are electrically connectedthrough the first conductive through via structure and sharing theamplifier circuit, and the first conductive through via structure iscoupled to a first input terminal of the amplifier circuit of the firstcircuit layer. The reference bitline has a plurality of referencebitline segments disposed on the circuit layers respectively, thereference bitline segments are electrically connected through the secondconductive through via structure and sharing the amplifier circuit, andthe second conductive through via structure is coupled to a second inputterminal of the amplifier circuit of the first circuit layer.

Some embodiments described herein may include a method for operating amemory device. The method includes electrically connecting a firstbitline segment and a second bitline segment of a selected bitline,respectively disposed on a first circuit layer and a second circuitlayer of the memory device stacked one over the other, to a bias circuitdisposed on the second circuit layer through a conductive through viastructure, the conductive through via structure being formed between thefirst circuit layer and the second circuit layer; utilizing the biascircuit on the second circuit layer to send a bias signal to a memorycell, disposed on the first circuit layer, through the conductivethrough via structure and the first bitline segment coupled to thememory cell, a data signal of the memory cell being generated inresponse to the bias signal; and determining data stored in the memorycell by comparing the data signal with a reference signal.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A memory device, comprising: a plurality ofcircuit layers disposed one above another, each circuit layer comprisingone or more memory cell arrays; a plurality of first conductive throughvia structures penetrating though the circuit layers; and a plurality ofbitlines, each bitline comprising a plurality of bitline segmentsdisposed on the circuit layers respectively, the bitline segments beingelectrically connected through one of the first conductive through viastructures, each bitline segment being coupled to a plurality of memorycells of a memory cell array of a circuit layer where the bitlinesegment is disposed.
 2. The memory device of claim 1, wherein each ofthe memory cells comprises a magnetic tunnel junction.
 3. The memorydevice of claim 1, wherein one of the circuit layers comprises a biascircuit shared by the bitline segments, and the current source isconfigured to drive a current to said one of the first conductivethrough via structures electrically connected to the bitline segments.4. The memory device of claim 1, wherein the circuit layers comprise afirst circuit layer and a second circuit layer; the first circuit layercomprises a first bitline selector, and the second circuit layercomprises a second bitline selector; the first bitline selector isconfigured to couple one of bitline segments disposed on the firstcircuit layer to a first conductive through via structure of the firstconductive through via structures, and the second bitline selector isconfigured to couple one of bitline segments disposed on the secondcircuit layer to the first conductive through via structure.
 5. Thememory device of claim 4, wherein the first circuit layer comprisesmemory peripheral circuitry; the memory peripheral circuitry iselectrically connected to the first bitline selector, and iselectrically connected to the second bitline selector of the secondcircuit layer through the first conductive through via structure.
 6. Thememory device of claim 5, wherein the memory peripheral circuitrycomprises at least one of a sense amplifier, a write driver circuit anda bias circuit.
 7. The memory device of claim 1, wherein the circuitlayers comprise a first circuit layer and a second circuit layer;bitline segments disposed on the first circuit layer are electricallyconnected to bitline segments disposed on the second circuit layerthrough the first conductive through via structures, respectively; thefirst circuit layer comprises a bitline selector, and the bitlineselector comprises a plurality of input terminals and an outputterminal; the input terminals are electrically connected to the firstconductive through via structures respectively, and the bitline selectoris configured to couple one of the input terminals to the outputterminal.
 8. The memory device of claim 7, wherein the first circuitlayer further comprises memory peripheral circuitry, and the memoryperipheral circuitry is coupled to the output terminal of the bitlineselector.
 9. The memory device of claim 8, wherein the memory peripheralcircuitry comprises at least one of a sense amplifier, a write drivercircuit and a bias circuit.
 10. The memory device of claim 1, whereinthe circuit layers comprise a first circuit layer and a second circuitlayer, the first circuit layer comprises a first wordline drivercircuit, and the second circuit layer comprises a second wordline drivercircuit; the memory device further comprises a plurality of secondconductive through via structures penetrating through the circuit layersand electrically connected between the first wordline driver circuit andthe second wordline driver circuit; the first wordline driver circuitand the second wordline driver circuit are configured to share a commonwordline address input on the second conductive through via structures.11. The memory device of claim 1, wherein the circuit layers comprise afirst circuit layer and a second circuit layer, and the first circuitlayer comprises a wordline driver circuit; the memory device furthercomprises a plurality of wordlines disposed on the second circuit layer,and a plurality of second conductive through via structures penetratingthrough the circuit layers; the second conductive through via structuresare electrically connected between the wordline driver circuit of thefirst circuit layer and the wordlines disposed on the second circuitlayer, and the wordline driver circuit of the first circuit layer isconfigured to drive the wordlines disposed on the second circuit layeraccording to a wordline address input on the second conductive throughvia structures.
 12. The memory device of claim 1, wherein at least oneof the first conductive through via structures comprises athough-silicon via.
 13. A memory device, comprising: a plurality ofcircuit layers disposed one above another, each circuit layer comprisingone or more memory cell arrays, a first circuit layer of the circuitlayers comprising an amplifier circuit; a plurality of conductivethrough via structures penetrating though the circuit layers, theconductive through via structures comprising a first conductive throughvia structure and a second conductive through via structure; a databitline having a plurality of data bitline segments disposed on thecircuit layers respectively, the data bitline segments beingelectrically connected through the first conductive through viastructure and sharing the amplifier circuit, the first conductivethrough via structure being coupled to a first input terminal of theamplifier circuit of the first circuit layer; and a reference bitlinehaving a plurality of reference bitline segments disposed on the circuitlayers respectively, the reference bitline segments being electricallyconnected through the second conductive through via structure andsharing the amplifier circuit, the second conductive through viastructure being coupled to a second input terminal of the amplifiercircuit of the first circuit layer.
 14. The memory device of claim 13,wherein the circuit layers further comprise a second circuit layer, thesecond circuit layer comprises a bias circuit shared by the data bitlinesegments, and the bias circuit is configured to drive a current to adata bitline segment disposed on the first circuit layer through thefirst conductive through via structure.
 15. The memory device of claim13, wherein the circuit layers further comprise a second circuit layer,the second circuit layer comprises a write driver circuit shared by thedata bitline segments, and the write driver circuit is configured todrive a data signal to a data bitline segment disposed on the firstcircuit layer through the first conductive through via structure. 16.The memory device of claim 13, wherein the first circuit layer furthercomprises a bias circuit shared by the data bitline segments, and thebias circuit is configured to drive a current to the first conductivethrough via structure.
 17. The memory device of claim 13, wherein thefirst circuit layer further comprises a write driver circuit shared bythe data bitline segments, and the write driver circuit is configured todrive a data signal to the first conductive through via structure. 18.The memory device of claim 13, wherein the circuit layers furthercomprise a second circuit layer, and the second circuit layer comprisesa bitline selector; the bitline selector comprises a plurality of inputterminals and an output terminal, and is configured to couple one of theinput terminals to the output terminal; the input terminals are coupledto a plurality of data bitline segments disposed on the second circuitlayer, respectively, and the output terminal is coupled to the firstconductive through via structure.
 19. A method for operating a memorydevice, comprising: electrically connecting a first bitline segment anda second bitline segment of a selected bitline, respectively disposed ona first circuit layer and a second circuit layer of the memory devicestacked one over the other, to a bias circuit disposed on the secondcircuit layer through a conductive through via structure, the conductivethrough via structure being formed between the first circuit layer andthe second circuit layer; utilizing the bias circuit on the secondcircuit layer to send a bias signal to a memory cell, disposed on thefirst circuit layer, through the conductive through via structure andthe first bitline segment, a data signal of the memory cell beinggenerated in response to the bias signal; and determining data stored inthe memory cell by comparing the data signal with a reference signal.20. The method of claim 19, where electrically connecting the firstbitline segment and the second bitline segment of the selected bitlineto the bias circuit disposed on the second circuit layer through theconductive through via structure comprises: coupling the first bitlinesegment on the first circuit layer to the conductive through viastructure; and coupling the second bitline segment on the second circuitlayer to the conductive through via structure.